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TGA4505
4 Watt Ka Band HPA
Key Features
* * * * * * * *
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Frequency Range: 24-31 GHz 23 dB Nominal Gain 35.5 dBm Nominal P1dB @30 GHz 36.0 dBm Nominal Psat @30 GHz 40 dBc at SCL Pout 20dBm 0.25 um pHEMT 2MI Technology Bias 6 V @ 2.1 A Idq Chip size 4.29 x 3.02 x .05 mm (0.169 x 0.119 x 0.002 in)
Primary Applications
Product Description
The TriQuint TGA4505 is a compact 4 Watt High Power Amplifier MMIC for Kaband applications. The part is designed using TriQuint's proven standard 0.25 um gate Power pHEMT production process. The TGA4505 provides a nominal 35.5 dBm of output power at 1 dB gain compression from 24-32 GHz with a small signal gain of 23 dB. The part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio. The TGA4505 is 100% DC and RF tested on-wafer to ensure performance compliance. Lead-free and RoHS compliant.
* *
Satellite Ground Terminal Point-to-Point Radio
Fixtured Data Bias Conditions: Vd = 6 V, Idq = 2.1A
Datasheet subject to change without notice TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev 1
TGA4505
TABLE I MAXIMUM RATINGS Symbol
V I
+ -
Parameter 1/
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current: Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds)
Value
8V -5V TO 0V 4A 62 mA 24 dBm 27.7 W 200 C 320 C -65 to 150 C
Notes
2/ 2/ 2/ 2/, 3/ 4/, 5/
V
+
| IG | PIN PD TCH
TSTG 1/ 2/ 3/ 4/
Storage Temperature
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this bias condition with a base plate temperature of 70 C, the median life is 2.3E4 hours. Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
TABLE II DC PROBE TEST (TA = 25 C, nominal) NOTES 1/ 1/ 1/, 2/ 1/, 2/ 1/, 2/ SYMBOL
MIN
5/
LIMITS
MAX
UNITS 70.5 79.5 1.5 30 30 mA mS V V V
IDSS(Q35) GM (Q35) |VP(Q1, Q9, Q35)| |VBVGS(Q35)| |VBVGD(Q35)|
15 33 0.5 11 11
1/ Q35 is a 150 um Test FET 2/ VP, VBVGD, and VBVGS are negative.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
2
TGA4505
TABLE III RF CHARACTERIZATION TABLE (TA = 25C, Nominal) (Vd = 6V, Id = 2.1A) SYMBOL PARAMETER TEST CONDITION F = 24-31 GHz TYPICAL UNITS
Gain
Small Signal Gain
23
dB
IRL
Input Return Loss
F = 24-31 GHz
6
dB
ORL
Output Return Loss
F = 24-31 GHz
12
dB
PWR
Output Power @ P1dB
F = 24-31 GHz
35
dBm
Note: Table III Lists the RF Characteristics of typical devices as determined by fixtured measurements.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
3
TGA4505
TABLE IV THERMAL INFORMATION Parameter JC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 6V ID = 2.05 A Pdiss = 12.3 W TCH (C) 128 JC (C/W) 4.7 Tm (HRS) 7.4E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70 C baseplate temperature. Worst case is at saturated output power when DC power consumption rises to 23 W with 4 W RF power delivered to load. Power dissipated is 19 W and the temperature rise in the channel is 88 C.
Median Lifetime (Tm) vs. Channel Temperature
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
4
TGA4505
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 2.1 A
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
5
TGA4505
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Id = 2.1 A Data taken @ 30 GHz
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
6
TGA4505
Mechanical Drawing
0.323 [0.013] 0.667 [0.026] 3.249 [0.128] 1.750 [0.069] 3.720 [0.146] 4.078 [0.161]
3.019 [0.119] 2.903 [0.114] 2.888 [0.114]
2.902 [0.114]
2 3 4 5 6 7
2.878 [0.113] 2.874 [0.113]
1.507 [0.059]
1
8
1.511 [0.059]
0.142 [0.006] 0.132 [0.005] 0.117 [0.005] 0.000 [0.000]
14
13
12
11
10
9
0.150 [0.006] 0.142 [0.006] 0.118 [0.005]
2.092 [0.082]
3.246 [0.128]
1.747 [0.069]
Units: millimeters (inches) Thickness: 0.050 (0.002) (reference only) Chip edge to bond pad dimensions are shown to center of pad Chip size: +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Pad Pad Pad Pad Pad Pad Pad Pad Pad Pad Pad Pad Pad Pad #1: #2: #3: #4: #5: #6: #7: #8: #9: #10: #11: #12: #13: #14: RF IN VG1 VD1 VG2 VD2 VG3 VD3 RF OUT VD3 VG3 VD2 VG2 VD1 VG1 0.130 x 0.205 (0.005 x 0.008) 0.080 x 0.080 (0.003 x 0.003) 0.143 x 0.103 (0.006 x 0.004) 0.105 x 0.105 (0.004 x 0.004) 0.205 x 0.105 (0.008 x 0.004) 0.080 x 0.080 (0.003 x 0.003) 0.095 x 0.130 (0.004 x 0.005) 0.130 x 0.205 (0.005 x 0.008) 0.095 x 0.130 (0.004 x 0.005) 0.080 x 0.080 (0.003 x 0.003 0.205 x 0.145 (0.008 x 0.006) 0.105 x 0.105 (0.004 x 0.004) 0.145 x 0.105 (0.006 x 0.004) 0.080 x 0.080 (0.003 x 0.003
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev 7
1.945 [0.077]
3.720 [0.146]
0.000 [0.000] 0.133 [0.005]
0.323 [0.013]
0.667 [0.026]
4.078 [0.161] 4.170 [0.164] 4.290 [0.169]
TGA4505
Recommended Chip Assembly & Bonding Diagram Both-Sided Biasing Option
Vd1/Vd2
Vd3
.01uf
.01uf
100pf
100pf
100pf
100pf
100pf
100pf
.01uf
.01uf
Vg1/Vg2/Vg3
Vd3
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev 8
TGA4505
Alternative Chip Assembly & Bonding Diagram Single-Side Biasing Option
Vg1/Vg2/Vg3
Vd1/Vd2
Vd3
.01uf
.01uf
.01uf
100pf
100pf
100pf
100pf
100pf
RF IN
RF OUT
100pf
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
9
TGA4505
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com May 2009 (c) Rev -
10

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